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Meeting Notice

The Southeastern Michigan IEEE EMC Society presents:

"Understanding ESD Phenomena"

Presented by: Cyrous Rostamzadeh
Robert Bosch LLC

The Southeastern Michigan IEEE Spring Section Conference will be held on Wednesday, April 2, 2008.

Location: Fairlane Campus - U of M Dearborn (Map Code FCN)

University of Michigan
School of Management
Fairlane Center North - Room TBD
19000 Hubbard Drive
Dearborn, MI 48126

Driving Directions


Registration Form


Presentation Slides

To register for this event, please submit the online Registration form - Pick "Chapter VIII - EMC" from the registration form menu.

There will be several concurrent technical presentations of interest to electrical engineers to choose from.

For more information on the IEEE Section Meeting, please visit the webpage at 


Tentative Schedule of Events 
4:00 PM                    On-site Registration Opens
5:00 PM - 5:45 PM   First half Chapter Presentations (Chapter VIII - EMC)
5:45 PM - 6:00 PM   Networking & Sponsor Tables
6:00 PM - 6:45 PM   Second half of Chapter Presentations 
6:45 PM - 7:15 PM   Networking & Sponsor Tables
7:15 PM - 7:45 PM   Dinner 
7:45 PM - 8:00 PM   Awards during Dinner
8:00 PM - 9:00 PM    Keynote Speaker

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Electrostatic Discharge (ESD) has become one of the most critical reliability issues in integrated circuits. Substantial number of IC failures is related to ESD. Continuous scaling and the introduction of new device concepts and materials have brought many new ESD challenges. Despite the strong need for understanding of ESD phenomena, there has been a perception that ESD engineering is a ‘black art’; ESD engineers used to provide solutions based on their experience without fundamental understanding of failure mechanisms.

In today’s competitive markets, it is essential for EMC engineers to understand ESD fundamentals and reduce design iterations thus minimizing product costs. For EMC engineers responsible for product development and compliance, an in-depth understanding of the ESD is very important.

In this presentation, key ESD concepts due to human body model will be discussed and protection mechanisms at the PCB level will be compared and contrasted. ESD phenomena involves electrical & thermal transport on the scale of nanometers (nm), circuits and electronics on the scale of micrometers (μm), semiconductor chip designs range from picoseconds (ps) to microseconds (μs), electrical currents of interest range from mA to 10’s of Amperes. Voltages range from Volts to kiloVolts (kV). Temperatures vary from room temperature to melting temperatures of 1000’s °K. EMC engineers must recognize ESD event physics and all its implications, particularly during the first 10 nsec.


Cyrous Rostamzadeh


Cyrous Rostamzadeh is currently an EMC Technical Specialist at Robert Bosch LLC, PlymouthMichigan, where he has implemented an EMC design and analysis process to facilitate product compliance at the lower cost. Since 1997 at Bosch, he is engaged in PCB and system level EMC robustness techniques and solutions. He is responsible to provide product design support and EMC interface to NA automotive market. During past 11 years at Bosch, he has played key roles in the design and development of EMC, signal integrity solutions for NA market.


Prior to joining Bosch, he was a senior EMC engineer at Ford Motor Company. His extensive research on load dump transient event resulted in identification of realistic waveform. His research has shaped the revised US EMC automotive standards. He was a core member of Ford EMC design and test process methodology team. In addition to Ford, he was a senior EMC engineer at General Motors Corporation. From 1989 – 1994 he was a senior electrical engineer at Superconducting Super Collider Laboratory (SSCL) Dallas, Texas. He was responsible for development and design of quench protection and detection electronics for superconducting magnets. His extensive research on utilization of ‘cold diodes’ and characterization under the influence of neutron flux at –273 0K as quench bypass switch, was successfully implemented at CERN. Previously he was employed at National Semiconductor as analog engineer. He spent 3 years at Grunding Corporation as RF engineer.


Cyrous received a B.Sc. in Physics from Imperial College, University of London (England) and MS in Electrical Engineering in 1980. Cyrous is an associate of the Royal College of Science (England). Cyrous attended MIT (summer 1990) on the design of 1100 MIIT SSCL Quench Bypass Switch. Cyrous attended Stanford University, Particle Accelerator Physics graduate school (summer 1992).  He is a senior IEEE member,  NARTE certified EMC and Product Safety Engineer. He is an active member of IEEE EMC TC-9 Computational Electromagnetics committee. He has given numerous EMC seminars and training courses to Bosch engineering associates. He has published extensively at IEEE EMC, IEEE PAC, URSI-GA and ASEE symposiums.


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